Data supporting the publication: InF3 Surface Passivation on InAs Quantum Dots Enhances Photoluminescence and Reduces Trap-induced Dark Current in Shortwave Infrared Photodetectors
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Shortwave infrared (SWIR) photodetectors are crucial for emerging technologies such as autonomous driving, smart agriculture, industrial inspection, and eye-safe LiDAR. Colloidal indium arsenide (InAs) quantum dots (QDs) offer a low-cost, RoHS-compliant alternative to epitaxial III–V semiconductors. But their performance is limited by a high density of surface trap states that induce nonradiative recombination and potentially give rise to a high dark current in photodiodes. Here, we demonstrate that InF 3 can effectively passivate these surface traps, significantly improving both optical and electronic properties. In non-polar solvents, a simple InF 3 treatment on oleylamine/chloride-capped In(As,P) and oleate-capped InAs QDs increases the photoluminescence quantum yield to 13% and 4%, respectively—the highest reported for core-only InAs QDs. In polar media, the InF 3 treatment remains effective but reduces colloidal stability. To overcome this limitation, a solid-state in situ InF 3 treatment of QD films was used. The treatment doubles the carrier lifetime and lowers the dark carrier density, confirmed by ultrafast transient absorption spectroscopy, microwave conductivity, and …
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